|
|
Número de pieza | 2SK427 | |
Descripción | N-Channel Junction Silicon FET | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK427 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Ordering number:EN1404B
N-Channel Junction Silicon FET
2SK427
AM Tuner RF Amplifier Applications
Applications
· AM tuner RF amplifiers and low-noise amplifiers.
Features
· Largeyfs.
· Ultralow noise figure.
· Small Crss.
Package Dimensions
unit:mm
2034A
[2SK427]
4.0
2.2
0.4
0.5
0.4
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
ID
PD
Tj
Tstg
123
1.3 1.3
3.0
3.8nom
Conditions
1 : Source
2 : Gate
3 : Drain
SANYO : SPA
Ratings
15
–15
10
20
200
125
–55 to +125
Unit
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–10V, VDS=0
Zero-Gate Voltage Drain Current
IDSS* VDS=5V, VGS=0
Cutoff Voltage
VGS(off) VDS=5V, ID=100µA
Forward Transfer Admittance
| yfs | VDS=5V, VGS=0, f=1kHz
Input Capacitance
Ciss VDS=5V, VGS=0, f=1MHz
Reverse Transfer Capacitance
Crss VDS=5V, VGS=0, f=1MHz
Noise Figure
NF VDS=5V, ID=1mA, Rg=1kΩ, f=1kHz
* : The 2SK427 is classified by IDSS as follows : (unit : mA) 1.2 P 2.1 1.7 Q 3.0 2.5 R 4.2
3.5 S 6.0 5.0 T 8.5 7.3 U 12.0
Ratings
min typ
–15
1.2*
–0.5
8.0 17
7.0
2.0
1.5
max
–1.0
12.0*
–1.5
Unit
V
nA
mA
V
mS
pF
pF
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42099TH (KT)/90895MO (KOTO)/6017KI/N283KI, TS (KOTO) 8-5644 No.1404–1/6
1 page 2SK427
No.1404–5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SK427.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK4200LS | N-Channel Silicon MOSFET | Sanyo Semicon Device |
2SK4203LS | N-Channel Silicon MOSFET | Sanyo Semicon Device |
2SK4204LS | N-Channel Silicon MOSFET | Sanyo Semicon Device |
2SK4207 | Field Effect Transistor | Toshiba Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |