M27C4001-35L1X Datasheet PDF - STMicroelectronics
| Part Number | M27C4001-35L1X | |
| Description | 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM | |
| Manufacturers | STMicroelectronics | |
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There is a preview and M27C4001-35L1X download ( pdf file ) link at the bottom of this page. Total 16 Pages | ||
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M27C4001
4 Mbit (512Kb x 8) UV EPROM and OTP EPROM
s 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
s FAST ACCESS TIME: 35ns
s LOW POWER CONSUMPTION:
– Active Current 30mA at 5MHz
– Standby Current 100µA
s PROGRAMMING VOLTAGE: 12.75V ± 0.25V
s PROGRAMMING TIME: 100µs/byte (typical)
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 41h
DESCRIPTION
The M27C4001 is a 4 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for micro-
processor systems requiring large programs and
is organised as 524,288 by 8 bits.
The FDIP32W (window ceramic frit-seal package)
and LCCC32W (leadless chip carrier package)
have a transparent lid which allow the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C4001 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20mm) packages.
Table 1. Signal Names
A0-A18
Address Inputs
Q0-Q7
Data Outputs
E Chip Enable
G Output Enable
VPP Program Supply
VCC Supply Voltage
VSS Ground
32
1
FDIP32W (F)
32
1
PDIP32 (B)
LCCC32W (L)
PLCC32 (C)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
VCC VPP
19
A0-A18
8
Q0-Q7
E M27C4001
G
VSS
AI00721B
July 1998
1/16
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M27C4001
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
Symbol
Parameter
Test Condition
Min
ILI Input Leakage Current
0V ≤ VIN ≤ VCC
ILO Output Leakage Current
0V ≤ VOUT ≤ VCC
ICC Supply Current
E = VIL, G = VIL,
IOUT = 0mA, f = 5MHz
ICC1 Supply Current (Standby) TTL
E = VIH
ICC2 Supply Current (Standby) CMOS
E > VCC – 0.2V
IPP Program Current
VPP = VCC
VIL Input Low Voltage
–0.3
VIH (2) Input High Voltage
2
VOL Output Low Voltage
IOL = 2.1mA
Output High Voltage TTL
VOH
Output High Voltage CMOS
IOH = –400µA
IOH = –100µA
2.4
VCC – 0.7
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V.
Max
±10
±10
30
1
100
10
0.8
VCC + 1
0.4
Unit
µA
µA
mA
mA
µA
µA
V
V
V
V
V
Table 8A. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
M24C4001
Symbol Alt
Parameter
Test Condit ion
-35 (3)
-45 (3)
Min Max Min Max
tAVQV
tACC
Address Valid to
Output Valid
E = VIL, G = VIL
35
45
tELQV
tCE
Chip Enable Low to
Output Valid
G = VIL
35 45
tGLQV
tOE
Output Enable Low to
Output Valid
E = VIL
20 25
tEHQZ (2)
tDF
Chip Enable High to
Output Hi-Z
G = VIL
0 30 0 30
tGHQZ (2)
tDF
Output Enable High to
Output Hi-Z
E = VIL
0 30 0 30
tAXQX
tOH
Address Transition to
Output Transition
E = VIL, G = VIL 0
0
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
-55 (3)
Min Max
55
55
30
0 30
0 30
0
Unit
ns
ns
ns
ns
ns
ns
5/16
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