(PDF) D2089 Datasheet - METAL GATE RF SILICON FET

Número de pieza	D2089
Descripción	METAL GATE RF SILICON FET
Fabricantes	Seme LAB
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No Preview Available ! MECHANICAL DATA 4 B H 3 2 PIN 1 PIN 3 C (2 pls) A SOURCE SOURCE 1 G (2 pls) D F E PIN 2 PIN 4 GATE DRAIN DIM Millimetres A 25.40 B 45° C 0.76 D 5.21 DIA E 1.02 F 0.13 G 3.18 H 3.18 Tol. 0.25 5° 0.05 0.13 0.13 0.02 0.13 REF Inches 1.00 45° 0.030 0.205 0.040 0.005 0.125 0.125 Tol. 0.010 5° 0.002 0.005 0.005 0.001 0.005 REF TetraFET D2089UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 4W BVDSS Drain – Source Breakdown Voltage 65V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 1A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 5/96 1 page

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PDF D2089 Data sheet ( Hoja de datos )