DataSheetWiki


D45H fiches techniques PDF

Motorola Inc - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS

Numéro de référence D45H
Description 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS
Fabricant Motorola Inc 
Logo Motorola  Inc 





1 Page

No Preview Available !





D45H fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Silicon Power
Transistors
These complementary silicon power transistors are designed for high–speed
switching applications, such as switching regulators and high frequency inverters.
The devices are also well–suited for drivers for high power switching circuits.
Fast Switching — tf = 90 ns (Max)
Key Parameters Specified @ 100_C
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 V (Max) @ 8.0 A
Complementary Pairs Simplify Circuit Designs
Order this document
by D44VH/D
D4N4PNVH
D4P5NVP H
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 VOLTS
83 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv v(1) Pulse Width 6.0 ms, Duty Cycle 50%.
Symbol
VCEO
VCEV
VEB
IC
ICM
PD
TJ, Tstg
Symbol
RθJC
RθJA
TL
CASE 221A–06
TO–220AB
Value
80
100
7.0
15
20
83
0.67
– 55 to 150
Max
1.5
62.5
275
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/_C
_C
Unit
_C/W
_C/W
_C
NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

PagesPages 4
Télécharger [ D45H ]


Fiche technique recommandé

No Description détaillée Fabricant
D4503B Hex 2 State Buffer ETC
ETC
D45128163G5 UPD45128163G5 NEC
NEC
D45128441G5 UPD45128441G5 NEC
NEC
D45128841G5 UPD45128841G5 NEC
NEC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche