DataSheetWiki


D2293 fiches techniques PDF

Seme LAB - METAL GATE RF SILICON FET

Numéro de référence D2293
Description METAL GATE RF SILICON FET
Fabricant Seme LAB 
Logo Seme LAB 





1 Page

No Preview Available !





D2293 fiche technique
MECHANICAL DATA
PIN 1
PIN 3
PIN 5
SOT 171
SOURCE
GATE
SOURCE
PIN 2
PIN 4
PIN 6
SOURCE
DRAIN
SOURCE
TetraFET
D2293UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 11 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
42W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current *
8A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected] Website http://www.semelab.co.uk
Prelim. 7/99

PagesPages 2
Télécharger [ D2293 ]


Fiche technique recommandé

No Description détaillée Fabricant
D2290UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W - 12.5V - 1GHz SINGLE ENDED ETC
ETC
D2293 METAL GATE RF SILICON FET Seme LAB
Seme LAB
D2293UK METAL GATE RF SILICON FET Seme LAB
Seme LAB
D2294UK METAL GATE RF SILICON FET Seme LAB
Seme LAB

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche