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Numéro de référence | D2293 | ||
Description | METAL GATE RF SILICON FET | ||
Fabricant | Seme LAB | ||
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1 Page
MECHANICAL DATA
PIN 1
PIN 3
PIN 5
SOT 171
SOURCE
GATE
SOURCE
PIN 2
PIN 4
PIN 6
SOURCE
DRAIN
SOURCE
TetraFET
D2293UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 11 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
42W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current *
8A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Prelim. 7/99
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Pages | Pages 2 | ||
Télécharger | [ D2293 ] |
No | Description détaillée | Fabricant |
D2290UK | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W - 12.5V - 1GHz SINGLE ENDED | ETC |
D2293 | METAL GATE RF SILICON FET | Seme LAB |
D2293UK | METAL GATE RF SILICON FET | Seme LAB |
D2294UK | METAL GATE RF SILICON FET | Seme LAB |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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