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PDF DCR1374SBA08 Data sheet ( Hoja de datos )
| Número de pieza | DCR1374SBA08 | |
| Descripción | Phase Control Thyristor | |
| Fabricantes | Dynex Semiconductor | |
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DCR1374SBA
DCR1374SBA
Phase Control Thyristor
Replaces February 2001 version, DS4597-5.1
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Turn-on Losses
APPLICATIONS
s High Voltage Power Converters
s DC Motor Control
s High Voltage Power Supplies
DS4597-5.2 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt
(max)
(max)
dI/dt
1800V
2694A
50000A
1000V/µs
1000A/µs
VOLTAGE RATINGS
Part and Ordering
Number
DCR1374SBA18
DCR1374SBA16
DCR1374SBA14
DCR1374SBA12
DCR1374SBA10
DCR1374SBA08
Repetitive Peak
Voltages
VDRM and VDRM
V
1800
1600
1400
1200
1000
800
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1374SBA16
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
Outline type code: MU140
(See Package Details for further information)
Fig. 1 Package outline
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1 page  
DCR1374SBA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
IGT
VGD
V
FGM
VFGN
VRGM
I
FGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
V = 5V, T = 25oC
DRM
case
At VDRM Tcase = 125oC
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max.
3
350
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
CURVES
8000
7000
Measured under pulse conditions
Tj = 125˚C
6000
5000
4000
5000
4000
3000
3000
2000
2000
1000
0
0.5 1.0
1.5
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
2.0
1000
0
0
d.c.
Half wave
3 phase
6 phase
1000
2000
3000
Mean on-state current IT(AV) - (A)
4000
Fig.3 Power dissipation
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 0.4846543
B = 8.508026 x 10–5
C = 0.05408984
D = 1.863019 x 10–3
these values are valid for Tj = 125˚C for IT 500A to 8000A
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DCR1374SBA08.PDF ] | |
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