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United Monolithic Semiconductors - Flip-Chip Dual Diode

Numéro de référence DBES105A
Description Flip-Chip Dual Diode
Fabricant United Monolithic Semiconductors 
Logo United Monolithic Semiconductors 





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DBES105A fiche technique
DBES105a
Flip-Chip Dual Diode
GaAs Diode
Description
The DBES105a is a dual Schottky diode based
on a low cost 1µm stepper process including a
bump technology. The parasitic inductances are
reduced and result in a very high operating
frequency.
This flip-chip dual diode has been designed for
high performance mixer applications.
Main Features
High cut-off frequencies : 3THz
High breakdown voltage : < -5V
@ 20µA
Good ideality factor : 1.2
Low parasitic inductances
Low cost technology
Dimensions : 0.53 x 0.23 x 0.1mm
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Wu Gate Width
Fco Cut-off frequency
n Ideality factor
BVak Anode-cathode break-down voltage
Typ Unit
5 µm
3 THz
1.2
< -5 V
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSDBES1051067 -08-Mar-01
1/4 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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