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دیتاشیت - Diotec Semiconductor - Bidirectional Si-Trigger-Diodes (DIAC)

شماره قطعه DB4
شرح مفصل Bidirectional Si-Trigger-Diodes (DIAC)
تولید کننده Diotec Semiconductor 
آرم Diotec Semiconductor 


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DB4 شرح
DB 3, DB 4
Bidirectional Si-Trigger-Diodes (DIAC)
Bidirektionale Si-Trigger-Dioden (DIAC)
Dimensions / Maße in mm
Breakover voltage
Durchbruchsspannung
Peak pulse current
Max. Triggerimpuls
Glass case
Glasgehäuse
Weight approx.
Gewicht ca.
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
28 ... 45 V
±2A
DO-35
SOD-27
0.13 g
see page 16
siehe Seite 16
Maximum ratings
Power dissipation – Verlustleistung
Peak pulse current (120 pulse repetition rate)
Max. Triggerstrom (120 Impulse)
TA = 50 /C
tP # 10 :s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics
Breakover voltage
Durchbruchspannung
dV/dt = 10V/:s
DB 3
DB 4
Breakover current – Durchbruchstrom
Asymmetry of breakover voltage
Unsymmetrie der Durchbruchspannug
V = 98 % VBO
*V(BO)F - V(BO)R*
Foldback voltage – Spannungs-Rücksprung
)I = IBO to/auf IF = 10 mA
dV/dt = 10V/:s
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Grenzwerte
Ptot 150 mW 1)
IPM ± 2 A 1)
Tj – 40…+100/C
TS – 40…+150/C
Kennwerte
VBO
VBO
IBO
)VBO
28 ... 36 V
35 ... 45 V
< 200 :A
< 3.8 V
)VF/R
>5V
RthA < 60 K/W 1)
1) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
420 01.10.2002

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