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Rectron Semiconductor - SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER

Numéro de référence DB101S
Description SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
Fabricant Rectron Semiconductor 
Logo Rectron Semiconductor 





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DB101S fiche technique
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
DB101S
THRU
DB107S
FEATURES
* Surge overload rating - 50 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
* UL listed the recognized component directory, file #E94233
.042 (1.1)
.038 (1.0)
DB-S
.310 (7.9)
.290 (7.4)
.255 (6.5)
.245 (6.2)
.013 (.330)
.003 (.076)
.410 (10.4)
.360 (9.4)
.009
(9.4)
.060 (1.524)
.040 (1.016)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.335 (8.51)
.320 (8.13)
.205 (5.2)
.195 (5.0)
.135 (3.4)
.115 (2.9)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TA = 40oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
1.0 Amps
IFSM
50 Amps
TJ,TSTG
-55 to + 150
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
@TA = 25oC
@TA = 125oC
NOTE: Suffix “-s” Surface Mount for Dip Bridge.
SYMBOL DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS
VF 1.1 Volts
5.0 uAmps
IR
0.5 mAmps
2001-4

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