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Fairchild Semiconductor - 1.5 Ampere Bridge Rectifiers

Numéro de référence DF10S
Description 1.5 Ampere Bridge Rectifiers
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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DF10S fiche technique
Discrete POWER & Signal
Technologies
DF005S - DF10S
Features
Surge overload rating: 50 amperes
peak.
Glass passivated junction.
Low leakage.
SDIP
LOW PROFILE ALSO AVAILABLE
BODY - - 0.102 (2.591)*
0.095 (2.413)*
1.5 Ampere Bridge Rectifiers
0.042 (1.067)
0.038 (0.965)
0.255 (6.477)
0.245 (6.223)
0.205 (5.207)
0.195 (4.953)
Dimensions are in:
inches (mm)
0.009 (0.229)
Typical
0.310 (7.874)
0.290 (7.366)
0.008 (0.203)
0.004 (0.102)
0.410 (10.414)
0.360 ( 9.144)
0.335 (8.509)
0.320 (8.128)
0.135 (3.429)*
0.115 (2.921)*
0.060 (1.524)
0.040 (1.016)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
Tstg
TJ
Average Rectified Current
@ TA = 40°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Storage Temperature Range
Operating Junction Temperature
1.5
50
3.1
25
40
-55 to +150
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Units
A
A
W
mW/°C
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Leakage,
total bridge @ rated VR TA = 25°C
TA = 125°C
Maximum Forward Voltage Drop,
per bridge
@ 1.0 A
I2t rating for fusing
t < 8.35 ms
Typical Junction Capacitance, per leg
VR = 4.0 V, f = 1.0 MHz
005S
50
35
50
01S
100
70
100
Device
02S 04S
200 400
140 280
200 400
5.0
500
1.1
10
25
06S
600
420
600
Units
08S 10S
800 1000
560 700
800 1000
V
V
V
µA
µA
V
A2Sec
pF
©1998 Fairchild Semiconductor Corporation
DF005S-DF10S, Rev. A

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