DataSheetWiki


DF06S fiches techniques PDF

Diodes Incorporated - 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

Numéro de référence DF06S
Description 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





1 Page

No Preview Available !





DF06S fiche technique
DF005S - DF10S
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE
RECTIFIER
Features
· Glass Passivated Die Construction
· Diffused Junction
· Low Forward Voltage Drop, High Current
Capability
· Surge Overload Rating to 50A Peak
· Designed for Surface Mount Application
· Plastic Material - UL Flammability
Classification 94V-0
· UL Listed Under Recognized Component Index,
File Number E94661
L
AB
G
DE
Dim
A
B
C
D
DF-S
Min
7.40
6.20
0.22
0.076
Max
7.90
6.50
0.30
0.33
E — 10.40
Mechanical Data
· Case: Molded Plastic
· Terminals: Solder Plated Leads, Solderable
per MIL-STD-202, Method 208
· Polarity: As marked on Case
· Approx. Weight: 0.38 grams
J
H
K
G 1.02 1.53
C H 8.13 8.51
J 2.40 2.60
K 5.00 5.20
L 1.00 1.20
All Dimensions in mm
· Mounting Position: Any
· Marking: Type Number
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRMM
VRWM
VR
RMS Reverse Voltage
VRMS
Average Forward Rectified Current
@ TA = 40°C IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms
single half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
Forward Voltage (per element)
@ IF = 1.0A VFM
Peak Reverse Current at Rated
DC Blocking Voltage (per element)
@ TA = 25°C
@ TA = 125°C
IRM
I2t Rating for Fusing (t<8.3ms)
I2t
Typical Junction Capacitance (per element) (Note 1)
Cj
Typical Thermal Resistance, Junction to Ambient
(Note 2)
RqJA
Operating and Storage Temperature Range
Tj, TSTG
DF
005S
50
35
DF
01S
100
70
DF DF DF
02S 04S 06S
200 400 600
140 280 420
1.0
50
1.1
10
500
10.4
25
40
-65 to +150
DF
08S
800
560
DF
10S
1000
700
Unit
V
V
A
A
V
µA
A2s
pF
°C/W
°C
Notes: 1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal resistance, junction to ambient, measured on PC board with 5.0mm2 (0.03mm thick) land areas.
DS17001 Rev. H-2
1 of 2
DF005S-DF10S

PagesPages 2
Télécharger [ DF06S ]


Fiche technique recommandé

No Description détaillée Fabricant
DF06 1.0A GLASS PASSIVATED BRIDGE RECTIFIER Won-Top Electronics
Won-Top Electronics
DF06 1.0A DIP & SMD BRIDGE RECTIFIERS Leshan Radio Company
Leshan Radio Company
DF06 GLASS PASSIVATED CHIP SINGLE-PHASE BRIDGE RECTIFIER GOOD-ARK Electronics
GOOD-ARK Electronics
DF06 SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Shanghai Sunrise Electronics
Shanghai Sunrise Electronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche