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Numéro de référence | BAV99 | ||
Description | Small Signal Diodes | ||
Fabricant | General Semiconductor | ||
Logo | |||
1 Page
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
BAL99, BAV99
Small Signal Diodes
FEATURES
♦ Silicon Epitaxial Planar Diode
♦ Fast switching diodes, especially suited
for automatic insertion.
♦ This diode is also available in other
configurations including a dual common cathode with
type designation BAV70 and a dual common anode with
type designation BAW56.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
3
12
BAL99
Marking: JF
3
Top View
12
BAV99
Marking: JE
Top View
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings for a single diode at 25 °C ambient temperature unless otherwise specified.
Reverse Voltage, Peak Reverse Voltage
Forward Current (continuous)
Non-Repetitive Peak Forward Current
at t = 1 µs
at t = 1 ms
at t = 1 s
Power Dissipation at Tamb = 25 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout.
Symbol
VR, VRM
IF
IFSM
IFSM
IFSM
Ptot
Tj
TS
Value
70
250
2
1
0.5
3501)
150
–65 to +150
Unit
V
mA
A
A
A
mW
°C
°C
4/98
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Pages | Pages 2 | ||
Télécharger | [ BAV99 ] |
No | Description détaillée | Fabricant |
BAV99 | High-speed switching diodes | NXP Semiconductors |
BAV99 | Small Signal Switching Diode | Vishay Telefunken |
BAV99 | SURFACE MOUNT FAST SWITCHING DIODE | Won-Top Electronics |
BAV99 | DUAL SERIES SWITCHING DIODE | Zowie Technology Corporation |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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