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General Semiconductor - Small Signal Diodes

Numéro de référence BAV99
Description Small Signal Diodes
Fabricant General Semiconductor 
Logo General Semiconductor 





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BAV99 fiche technique
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
BAL99, BAV99
Small Signal Diodes
FEATURES
Silicon Epitaxial Planar Diode
Fast switching diodes, especially suited
for automatic insertion.
This diode is also available in other
configurations including a dual common cathode with
type designation BAV70 and a dual common anode with
type designation BAW56.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
3
12
BAL99
Marking: JF
3
Top View
12
BAV99
Marking: JE
Top View
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings for a single diode at 25 °C ambient temperature unless otherwise specified.
Reverse Voltage, Peak Reverse Voltage
Forward Current (continuous)
Non-Repetitive Peak Forward Current
at t = 1 µs
at t = 1 ms
at t = 1 s
Power Dissipation at Tamb = 25 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout.
Symbol
VR, VRM
IF
IFSM
IFSM
IFSM
Ptot
Tj
TS
Value
70
250
2
1
0.5
3501)
150
–65 to +150
Unit
V
mA
A
A
A
mW
°C
°C
4/98

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