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What is BAV756DW?

This electronic component, produced by the manufacturer "Diodes Incorporated", performs the same function as "QUAD SURFACE MOUNT SWITCHING DIODE ARRAY".


BAV756DW Datasheet PDF - Diodes Incorporated

Part Number BAV756DW
Description QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
Manufacturers Diodes Incorporated 
Logo Diodes Incorporated Logo 


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BAV756DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
Features
Mechanical Data
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
One BAV70 Circuit and One BAW56 Circuit In One Package
Easily Connected As Full Wave Bridge
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Notes 4 and 5)
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
SOT-363
C1 A1 C2
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Notes 1 and 2)
Average Rectified Output Current (Notes 1 and 2)
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0s
A1 C2 A2
TOP VIEW
Internal Schematic
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Value
100
75
53
300
150
2.0
1.0
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Notes 1 and 2)
Power Dissipation TS = 60°C (Note 2)
Thermal Resistance Junction to Ambient Air (Notes 1 and 2)
Thermal Resistance Junction to Soldering Point (Note 2)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJS
TJ, TSTG
Value
200
300
625
275
-65 to +150
Unit
mW
mW
°C/W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Reverse Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
Min
75
VF
IR
CT
trr
Max
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
IR = 2.5μA
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. One or more diodes loaded.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
6. Short duration pulse test used to minimize self-heating effect.
BAV756DW
Document number: DS30148 Rev. 9 - 2
1 of 3
www.diodes.com
April 2008
© Diodes Incorporated


Part Details

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