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دیتاشیت - NXP - High-speed switching diodes

شماره قطعه BAV70
شرح مفصل High-speed switching diodes
تولید کننده NXP 
آرم NXP 


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BAV70 شرح
BAV70 series
High-speed switching diodes
Rev. 8 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV70
SOT23 -
BAV70M
SOT883 SC-101
BAV70S
SOT363 SC-88
BAV70T
BAV70W
SOT416
SOT323
SC-75
SC-70
JEDEC
Package
configuration
TO-236AB small
- leadless ultra
small
- very small
- ultra small
- very small
Configuration
dual common cathode
dual common cathode
quadruple common
cathode/common cathode
dual common cathode
dual common cathode
1.2 Features and benefits
High switching speed: trr 4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: Cd 1.5 pF
Reverse voltage: VR 100 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
VR = 80 V
Min Typ
-
-
[1] -
-
-
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
Max
0.5
100
4
Unit
A
V
ns

قانون اساسیصفحه 16
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