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Fairchild Semiconductor - General Purpose Diodes

Numéro de référence BAV21
Description General Purpose Diodes
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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BAV21 fiche technique
BAV19 / 20 / 21
DO-35
High Voltage General Purpose Diode
Sourced from Process 1J.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W IV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
BAV19
BAV20
BAV21
100
150
200
200
500
600
1.0
4.0
-65 to +200
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
BAV19 / 20 / 21
500
3.33
300
Units
V
V
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW /°C
°C/W
2000 Fairchild Semiconductor International
BAV19/20/21, Rev. A

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