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BAV200 fiches techniques PDF

Vishay Telefunken - Silicon Epitaxial Planar Diodes

Numéro de référence BAV200
Description Silicon Epitaxial Planar Diodes
Fabricant Vishay Telefunken 
Logo Vishay Telefunken 





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BAV200 fiche technique
Silicon Epitaxial Planar Diodes
Applications
General purposes
BAV200...BAV203
Vishay Telefunken
96 12009
Absolute Maximum Ratings
Tj = 25_C
Parameter
Peak reverse voltage
Test Conditions
Reverse voltage
Forward current
Peak forward surge current
Forward peak current
Junction temperature
Storage temperature range
tp=1s, Tj=25°C
f=50Hz
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Type
BAV200
BAV201
BAV202
BAV203
BAV200
BAV201
BAV202
BAV203
Symbol
VRRM
VRRM
VRRM
VRRM
VR
VR
VR
VR
IF
IFSM
IFM
Tj
Tstg
Value
60
120
200
250
50
100
150
200
250
1
625
175
–65...+175
Unit
V
V
V
V
V
V
V
V
mA
A
mA
°C
°C
Symbol
RthJA
Value
500
Unit
K/W
Document Number 85544
Rev. 3, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
1 (4)

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