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Numéro de référence | BAV170 | ||
Description | Silicon Low Leakage Diode Array | ||
Fabricant | Infineon Technologies AG | ||
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1 Page
Silicon Low Leakage Diode Array
• Low-leakage applications
• Medium speed switching times
BAV170...
BAV170
3
D1 D2
12
Type
BAV170
Package
SOT23
Configuration
common cathode
Marking
JXs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
VRM
IF
I FSM
Value
80
85
200
4.5
Unit
V
mA
A
t=1s
0.5
Total power dissipation
TS ≤ 35°C
Junction temperature
Storage temperature
Ptot 250 mW
Tj 150 °C
Tstg -65 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
BAV170
Symbol
RthJS
Value
≤ 460
Unit
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Mar-10-2004
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Pages | Pages 4 | ||
Télécharger | [ BAV170 ] |
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