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Infineon Technologies AG - Silicon Low Leakage Diode Array

Numéro de référence BAV170
Description Silicon Low Leakage Diode Array
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BAV170 fiche technique
Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times
BAV170...
BAV170
3
D1 D2
12
Type
BAV170
Package
SOT23
Configuration
common cathode
Marking
JXs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
VRM
IF
I FSM
Value
80
85
200
4.5
Unit
V
mA
A
t=1s
0.5
Total power dissipation
TS 35°C
Junction temperature
Storage temperature
Ptot 250 mW
Tj 150 °C
Tstg -65 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
BAV170
Symbol
RthJS
Value
460
Unit
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Mar-10-2004

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