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Numéro de référence | BAV103 | ||
Description | Silicon Epitaxial Planar Diodes | ||
Fabricant | Vishay Telefunken | ||
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1 Page
Silicon Epitaxial Planar Diodes
Applications
General purposes
BAV100...BAV103
Vishay Telefunken
94 9371
Absolute Maximum Ratings
Tj = 25_C
Parameter
Repetitive peak reverse voltage
Test Conditions
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Power dissipation
Junction temperature
Storage temperature range
tp=1s
Type
BAV100
BAV101
BAV102
BAV103
BAV100
BAV101
BAV102
BAV103
Symbol
VRRM
VRRM
VRRM
VRRM
VR
VR
VR
VR
IFSM
IFRM
IF
PV
Tj
Tstg
Value
60
120
200
250
50
100
150
200
1
625
250
500
175
–65...+175
Unit
V
V
V
V
V
V
V
V
A
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction lead
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
RthJL
RthJA
Value
350
500
Unit
K/W
K/W
Document Number 85542
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
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Pages | Pages 4 | ||
Télécharger | [ BAV103 ] |
No | Description détaillée | Fabricant |
BAV10 | High-speed diode | NXP Semiconductors |
BAV100 | General purpose diodes | NXP Semiconductors |
BAV100 | Silicon Epitaxial Planar Diodes | Vishay Telefunken |
BAV100 | Small Signal Diodes | General Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
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