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Fairchild Semiconductor - High Voltage / General Purpose Diode

Numéro de référence BAV102
Description High Voltage / General Purpose Diode
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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BAV102 fiche technique
April 2013
BAV102
High Voltage, General Purpose Diode
Cathode Band
SOD80
Description
A general purpose diode that couples high forward con-
ductance fast swiching speed and high blocking volt-
ages in a glass leadless LL-34 surface mount package.
Placement of the expansion gap has no relationship to
the location of the cathode terminal which is indicated by
the first color band.
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
WIV
IO
IF
if
IFSM
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Non-repetitive Peak Forward Current
Pulse Width = 1.0 s
Pulse Width = 1.0 μs
150 V
200 mA
500 mA
600 mA
1.0 A
4.0 A
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
-65 to +200
-65 to +200
°C
°C
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Power Dissipation
Linear Derating Factor from TA = 25°C
Thermal Resistance, Junction to Ambient
Value
500
3.33
350
Units
mW
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation
BAV102 Rev. 1.1.0
1
www.fairchildsemi.com

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