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Infineon Technologies AG - Silicon Schottky Diode

Numéro de référence BAT63-07WE6811
Description Silicon Schottky Diode
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BAT63-07WE6811 fiche technique
Silicon Schottky Diode
 Low barrie diode for detectors up to GHz
frequencies
 For high-speed switching applications
 Zero bias detector diode
BAT63-07WE6811
BAT63-07W
4
D1
1
3
D2
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAT63-07WE6811
Package
SOT343
Configuration
parallel pair
LS (nH) Marking
1.6 63s
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation
TS  103 °C
Junction temperature
Storage temperature
Symbol
VR
IF
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
8
100
100
150
-55 ... 150
Value
 470
Unit
V
mA
mW
°C
Unit
K/W
1 Jul-24-2002

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