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Numéro de référence | BAT63-07WE6811 | ||
Description | Silicon Schottky Diode | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
Silicon Schottky Diode
Low barrie diode for detectors up to GHz
frequencies
For high-speed switching applications
Zero bias detector diode
BAT63-07WE6811
BAT63-07W
4
D1
1
3
D2
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAT63-07WE6811
Package
SOT343
Configuration
parallel pair
LS (nH) Marking
1.6 63s
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation
TS 103 °C
Junction temperature
Storage temperature
Symbol
VR
IF
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
8
100
100
150
-55 ... 150
Value
470
Unit
V
mA
mW
°C
Unit
K/W
1 Jul-24-2002
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Pages | Pages 4 | ||
Télécharger | [ BAT63-07WE6811 ] |
No | Description détaillée | Fabricant |
BAT63-07WE6811 | Silicon Schottky Diode | Infineon Technologies AG |
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