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Numéro de référence | BAT62-02W | ||
Description | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) | ||
Fabricant | Siemens Semiconductor Group | ||
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1 Page
Silicon Schottky Diode
• Low barrier diode for detectors up to GHz
frequencies
BAT 62-02W
2
1 VES05991
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code
Pin Configuration
BAT 62-02W L
Q62702-A1028
1=C
2=A
Package
SCD-80
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Junction temperature
Storage temperature
Thermal Resistance
Junction - ambient 1)
Junction - soldering point
Symbol
VR
IF
Tj
Tstg
RthJA
RthJS
Value
40
40
150
-55 ...+150
Unit
V
mA
°C
≤ 650
≤ 810
K/W
1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm
SSeemmicioconndduuctcotor rGGrorouupp
11
Jul1-90928--11919-081
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Pages | Pages 4 | ||
Télécharger | [ BAT62-02W ] |
No | Description détaillée | Fabricant |
BAT62-02L | Silicon Schottky Diode | Infineon Technologies AG |
BAT62-02LS | Silicon Schottky Diode | Infineon |
BAT62-02V | Silicon Schottky Diode | Infineon |
BAT62-02W | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) | Siemens Semiconductor Group |
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