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Siemens Semiconductor Group - Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)

Numéro de référence BAT62-02W
Description Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BAT62-02W fiche technique
Silicon Schottky Diode
Low barrier diode for detectors up to GHz
frequencies
BAT 62-02W
2
1 VES05991
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code
Pin Configuration
BAT 62-02W L
Q62702-A1028
1=C
2=A
Package
SCD-80
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Junction temperature
Storage temperature
Thermal Resistance
Junction - ambient 1)
Junction - soldering point
Symbol
VR
IF
Tj
Tstg
RthJA
RthJS
Value
40
40
150
-55 ...+150
Unit
V
mA
°C
650
810
K/W
1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm
SSeemmicioconndduuctcotor rGGrorouupp
11
Jul1-90928--11919-081

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