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PDF BAT54SLT1 Data sheet ( Hoja de datos )

Número de pieza BAT54SLT1
Descripción 30 VOLTS DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES
Fabricantes Motorola Inc 
Logotipo Motorola  Inc Logotipo



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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAT54SLT1/D
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
BAT54SLT1
Motorola Preferred Device
30 VOLTS
DUAL HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
1
ANODE
2
CATHODE
3
CATHODE/ANODE
3
1
2
CASE 318 – 08, STYLE 11
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 30
PF
225
1.8
Forward Current (DC)
Junction Temperature
Storage Temperature Range
DEVICE MARKING
IF 200 Max
TJ 125 Max
Tstg – 55 to +150
BAT54S = LD3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
V(BR)R
CT
IR
VF
VF
VF
trr
VF
VF
IF
IFRM
IFSM
30
7.6
0.5
0.22
0.41
0.52
0.29
0.35
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 4
Unit
Volts
mW
mW/°C
mA
°C
°C
Max Unit
— Volts
10 pF
2.0 µAdc
0.24 Vdc
0.5 Vdc
1.0 Vdc
5.0 ns
0.32 Vdc
0.40 Vdc
200 mAdc
300 mAdc
600 mAdc
©MMoottoororloal,aInSc.m19a9l7l–Signal Transistors, FETs and Diodes Device Data
5–1

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