|
|
Numéro de référence | BAT14-03W | ||
Description | Silicon Schottky Diode | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
Silicon Schottky Diode
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type
BAT14...
BAT14-03W
12
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAT14-03W
Package
SOD323
Configuration
single
LS(nH) Marking
1.8 O/white
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS 85 °C
Junction temperature
Operating temperature range
Storage temperature
VR
IF
Ptot
Tj
Top
Tstg
Value
4
90
100
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
690
Unit
K/W
1 Feb-03-2003
|
|||
Pages | Pages 3 | ||
Télécharger | [ BAT14-03W ] |
No | Description détaillée | Fabricant |
BAT14-03 | Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) | Siemens Semiconductor Group |
BAT14-033 | HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) | Siemens Semiconductor Group |
BAT14-034 | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) | Siemens Semiconductor Group |
BAT14-034 | HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) | Siemens Semiconductor Group |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |