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Diodes Incorporated - SILICON SCHOTTKY BARRIER DIODE

Numéro de référence BAS85T
Description SILICON SCHOTTKY BARRIER DIODE
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





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BAS85T fiche technique
BAS85T-01I
SILICON SCHOTTKY BARRIER DIODE
Features
· For general applications
· Low turn-on voltage
· PN junction guard ring
A Min Max
B A 3.4 3.6
C B 1.40 1.50
C 0.20 0.40
All dimensions in mm
Mechanical Data
· Glass case
· Weight: 0.05g (approx)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Continuous reverse voltage
Forward continuous current*
Peak forward current *
Surge forward current*
Power dissipation*
Junction temperature
Operating temperature range
Storage temperature range
@ tp = 1s
@ TA = 65°C
Symbol
VR
IF
IFM
IFSM
Ptot
Tj
TA
TSTG
Value
30
200
300
600
250
125
-65 to +125
-65 to +150
Electrical Characteristics @ Tj = 25°C unless otherwise specified
Characteristic
Reverse breakdown voltage
10 µA pulses
Symbol
V(BR)R
* Valid provided that electrodes are kept at ambient temperature.
Min
30
Typ
Unit
V
mA
mA
mA
mW
°C
°C
°C
Max
Unit
V
DIODES INC 3050 East Hillcrest Drive, Westlake Village, CA 91362-3154
TEL: (805) 446-4800 FAX: (805) 446-4850
Document Number: 11004 Revision A- 5
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FAX-BACK: (805) 446-4870 www.diodes.com

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