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Número de pieza BAS85
Descripción Schottky barrier diode
Fabricantes NXP Semiconductors 
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BAS85
Schottky barrier diode
Rev. 6 — 10 September 2010
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted
Device SMD package with tin-plated metal discs at each end. It is suitable for
“automatic placement” and as such it can withstand immersion soldering.
1.2 Features and benefits
„ Low forward voltage
„ High breakdown voltage
„ Guard-ring protected
„ Hermetically sealed glass SMD package
1.3 Applications
„ Ultra high-speed switching
„ Voltage clamping
„ Protection circuits
„ Blocking diodes
1.4 Quick reference data
Table 1.
Symbol
IF
VR
VF
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
Conditions
IF = 100 mA
Min Typ Max Unit
- - 200 mA
- - 30 V
- - 800 mV

1 page




BAS85 pdf
NXP Semiconductors
8. Package outline
BAS85
Schottky barrier diode
0.3
3.7
3.3
0.3
1.60
1.45
Dimensions in mm
Fig 5. Package outline SOD80C
06-03-16
9. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
BAS85
SOD80C 4 mm pitch, 8 mm tape and reel
Packing quantity
2 500
10 000
-115 -135
[1] For further information and the availability of packing methods, see Section 13.
BAS85
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 September 2010
© NXP B.V. 2010. All rights reserved.
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