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Numéro de référence | BAS79D | ||
Description | Silicon Switching Diodes | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
BAS79A...BAS79D
Silicon Switching Diodes
Switching applications
High breakdown voltage
Common cathode
4
3
2
2, 4 1 VPS05163
13
Type
BAS79A
BAS79B
BAS79C
BAS79D
Marking
BAS 79A
BAS 79B
BAS 79C
BAS 79D
EHA00005
1 = A1
1 = A1
1 = A1
1 = A1
Pin Configuration
2=C1/2 3 = A2 4=C1/2
2=C1/2 3 = A2 4=C1/2
2=C1/2 3 = A2 4=C1/2
2=C1/2 3 = A2 4=C1/2
Package
SOT223
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current, t = 1 s
Total power dissipation, TS = 114 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VR
VRM
IF
IFM
IFS
Ptot
Tj
Tstg
BAS
79A
50
50
BAS BAS
79B 79C
100 200
100 200
1
1
10
1.2
150
-65 ... 150
RthJS
30
1For calculation of RthJA please refer to Application Note Thermal Resistance
BAS Unit
79D
400 V
400
A
W
°C
K/W
1 Aug-20-2001
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Pages | Pages 3 | ||
Télécharger | [ BAS79D ] |
No | Description détaillée | Fabricant |
BAS79 | Silicon Switching Diodes | Infineon Technologies AG |
BAS79A | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) | Siemens Semiconductor Group |
BAS79A | Silicon Switching Diodes | Infineon Technologies AG |
BAS79B | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) | Siemens Semiconductor Group |
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