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Numéro de référence | BAS79C | ||
Description | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
Silicon Switching Diodes
q Switching applications
q High breakdown voltage
q Common cathode
BAS 79 A
… BAS 79 D
Type
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
Marking
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
Ordering Code
(tape and reel)
Q62702-A914
Q62702-A915
Q62702-A916
Q62702-A917
Pin Configuration
Package1)
SOT-223
Maximum Ratings
Parameter
Symbol
Reverse voltage
VR
Peak reverse voltage
VRM
Forward current
IF
Peak forward current
IFM
Surge forward current, t = 1 µs
IFS
Total power dissipation, TS = 114 ˚C2) Ptot
Junction temperature
Tj
Storage temperature range
Tstg
BAS
79 A
50
50
Values
BAS BAS
79 B 79 C
100 200
100 200
1
1
10
1.2
150
– 65 … + 150
BAS
79 D
400
400
Unit
V
A
W
˚C
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
≤ 170
≤ 30
K/W
Semiconductor Group
1
5.91
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Pages | Pages 3 | ||
Télécharger | [ BAS79C ] |
No | Description détaillée | Fabricant |
BAS79 | Silicon Switching Diodes | Infineon Technologies AG |
BAS79A | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) | Siemens Semiconductor Group |
BAS79A | Silicon Switching Diodes | Infineon Technologies AG |
BAS79B | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) | Siemens Semiconductor Group |
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