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Siemens Semiconductor Group - Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

Numéro de référence BAS40W
Description Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BAS40W fiche technique
Silicon Schottky Diode
q General-purpose diodes for
high-speed switching
q Circuit protection
q Voltage clamping
q High-level detecting and mixing
BAS 40W
Type
BAS 40-04W
BAS 40-05W
BAS 40-06W
Ordering Code
(tape and reel)
Q62702-A1065
Q62702-A1066
Q62702-A1067
Pin Configuration
123
Marking Package1)
A1 C1 C1/A2 44s
A1 A2 C1/C2 45s
C1 C2 A1/A2 46s
SOT-323
Maximum Ratings
Parameter
Reverse voltage
Forward current
Surge forward current, t 10 ms
Total power dissipation TS 106 °C
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-ambient2)
Junction-soldering point
Symbol
VR
IF
IFSM
Ptot
Tj
Top
Tstg
Rth JA
Rth JS
Values
40
120
200
250
150
– 55 … + 150
– 55 … + 150
395
175
Unit
V
mA
mA
mW
°C
°C
°C
K/W
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm2 Cu.
Semiconductor Group
1
02.96

PagesPages 4
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