DataSheetWiki


BAS40-06LT1 fiches techniques PDF

ON Semiconductor - SCHOTTKY BARRIER DIODE

Numéro de référence BAS40-06LT1
Description SCHOTTKY BARRIER DIODE
Fabricant ON Semiconductor 
Logo ON Semiconductor 





1 Page

No Preview Available !





BAS40-06LT1 fiche technique
BAS40-06LT1
Preferred Device
Common Anode Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand held and portable
applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.50 Volts (Typ) @ IF = 10 mAdc
Device Marking: L2
http://onsemi.com
40 VOLTS
SCHOTTKY BARRIER DIODE
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Symbol
Rating
Value
Unit
VR Reverse Voltage
40 Volts
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max Unit
PF Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
225 mW
1.8 mW/°C
TJ, Tstg Operating Junction and Storage
Temperature Range
–55 to
+150
°C
3
1
2
PLASTIC
SOT–23 (TO–236AB)
CASE 318
ANODE
3
CATHODE
1
2
CATHODE
ORDERING INFORMATION
Device
Package
Shipping
BAS40–06LT1 SOT–23 3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 3
1
Publication Order Number:
BAS40–06LT1/D

PagesPages 4
Télécharger [ BAS40-06LT1 ]


Fiche technique recommandé

No Description détaillée Fabricant
BAS40-06LT1 SCHOTTKY BARRIER DIODE ON Semiconductor
ON Semiconductor
BAS40-06LT1G Common Anode Schottky Barrier Diodes ON Semiconductor
ON Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche