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Numéro de référence | BAS40-04 | ||
Description | Surface Mount Schottky Barrier Diodes | ||
Fabricant | Vishay Telefunken | ||
Logo | |||
1 Page
BAS40/–04/–05/–06
Vishay Telefunken
Surface Mount Schottky Barrier Diodes
Features
D Low Turn–on Voltage
D Fast Switching
D PN Junction Guard Ring for Transient and ESD
Protection
Applications
Fast switches in thick and thin film circuits
94 8550
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
Peak forward surge current
Average forward current
tp<1s, on fiberglass substrate
Forward current
on fiberglass substrate
Power dissipation
on fiberglass substrate
Junction and storage temperature range
Symbol
VRRM
=VRWM
=VR
IFSM
IFAV
IF
Pd
Tj=Tstg
Value
40
600
100
200
200
–55...+150
Unit
V
mA
mA
mA
mW
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
on fiberglass substrate
Symbol
RthJA
Value
625
Unit
K/W
Document Number 85506
Rev. 1, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
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Pages | Pages 4 | ||
Télécharger | [ BAS40-04 ] |
No | Description détaillée | Fabricant |
BAS40-00 | Small Signal Schottky Diodes | Vishay |
BAS40-00-V | (BAS40-00-V - BAS40-06-V) Small Signal Schottky Diodes | Vishay Siliconix |
BAS40-02L | Silicon Schottky Diode | Infineon Technologies AG |
BAS40-04 | Schottky barrier double diodes | NXP Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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