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Número de pieza | BAS35 | |
Descripción | Small Signal Diode | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BAS35 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! BAS35
3
2
1
SOT-23
3
L22
12
Connection Diagram
3
12
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VRRM
Maximum Repetitive Reverse Voltage
120
IF(AV)
Average Rectified Forward Current
200
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
Tstg Storage Temperature Range
-55 to +150
TJ Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
150
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Units
V
mA
A
A
°C
°C
Symbol
PD
RθJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VR Breakdown Voltage
VF Forward Voltage
IR Reverse Current
CT Total Capacitance
trr Reverse Recovery Time
IR = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 400 mA
VR = 90 V
VR = 90 V, TA = 150°C
VR = 0, f = 1.0 MHz
IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω
2001 Fairchild Semiconductor Corporation
Value
350
357
Units
mW
°C/W
Min
120
Max
750
840
900
1.0
1.25
100
100
35
50
Units
V
mV
mV
mV
V
V
nA
µA
pF
ns
BAS35, Rev. C
1 page |
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