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PDF BAS31 Data sheet ( Hoja de datos )
| Número de pieza | BAS31 | |
| Descripción | High Voltage General Purpose Diode | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Discrete POWER & Signal
Technologies
BAS31
3
SOT-23
2
1
3
L21
12
CONNECTION DIAGRAM
3
12
High Voltage General Purpose Diode
Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
WIV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
90
200
600
700
1.0
2.0
-50 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
BAS31
350
2.8
357
Units
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW/°C
°C/W
©1997 Fairchild Semiconductor Corporation
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BAS31.PDF ] | |
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