|
|
Numéro de référence | BAS282 | ||
Description | Small Signal Schottky Diodes | ||
Fabricant | Vishay Telefunken | ||
Logo | |||
1 Page
www.vishay.com
BAS281, BAS282, BAS283
Vishay Semiconductors
Small Signal Schottky Diodes
MECHANICAL DATA
Case: QuadroMELF SOD-80
Weight: approx. 34 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Integrated protection ring against static
discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• General purpose and switching Schottky barrier diode
• HF-detector
• Protection circuit
• Diode for low currents with a low supply voltage
• Small battery charger
• Power supplies
• DC/DC converter for notebooks
PARTS TABLE
PART
BAS281
BAS282
BAS283
TYPE DIFFERENTATION
ORDERING CODE
INTERNAL CONSTRUCTION
VR = 40 V
BAS281-GS18 or BAS281-GS08
Single diode
VR = 50 V
BAS282-GS18 or BAS282-GS08
Single diode
VR = 60 V
BAS283-GS18 or BAS283-GS08
Single diode
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
tp = 1 s
BAS281
BAS282
BAS283
VR
VR
VR
IFSM
IFRM
IF
VALUE
40
50
60
500
150
30
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
RthJA
Junction temperature
Storage temperature range
Tj
Tstg
VALUE
320
125
- 65 to + 150
UNIT
V
V
V
mA
mA
mA
UNIT
K/W
°C
°C
Rev. 1.8, 15-May-12
1 Document Number: 85500
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
|||
Pages | Pages 5 | ||
Télécharger | [ BAS282 ] |
No | Description détaillée | Fabricant |
BAS28 | High-speed double diode ( Reverse voltage : 75V ) | NXP Semiconductors |
BAS28 | Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) | Siemens Semiconductor Group |
BAS28 | DUAL/ ISOLATED HIGH SPEED SWITCHING DIODE | Central Semiconductor Corp |
BAS28 | Silicon Switching Diode | Infineon Technologies AG |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |