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NXP Semiconductors - High-speed double diode ( Reverse voltage : 75V )

Numéro de référence BAS28
Description High-speed double diode ( Reverse voltage : 75V )
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BAS28 fiche technique
BAS28
High-speed double diode
Rev. 3 — 22 July 2010
Product data sheet
1. Product profile
1.1 General description
Two high-speed switching diodes fabricated in planar technology, and encapsulated in a
small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not
connected.
1.2 Features and benefits
„ High switching speed: trr 4 ns
„ Reverse voltage: VR 75 V
„ Repetitive peak reverse voltage: VRRM 85 V
„ Repetitive peak forward current: IFRM 500 mA
„ AEC-Q101 qualified
„ Small SMD package
1.3 Applications
„ High-speed switching in e.g. surface-mounted circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
IF forward current
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
VR = 75 V
Min Typ
[1] -
-
-
[2] -
-
-
-
-
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
215
1
75
4
Unit
mA
μA
V
ns

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