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Numéro de référence | BAS19 | ||
Description | Silicon Switching Diodes | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
BAS19...BAS21
Silicon Switching Diodes
3
High-speed, high-voltage switching applications
13
EHA07002
2
1 VPS05161
Type
BAS19
BAS20
BAS21
Marking
JPs
JRs
JSs
Pin Configuration
1=A
2 = n.c. 3 = C
1=A
2 = n.c. 3 = C
1=A
2 = n.c. 3 = C
Package
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Diode reverse voltage
BAS19
BAS20
BAS21
Symbol
VR
Value
100
150
200
Peak reverse voltage-
BAS19
BAS20
BAS21
VRM
120
200
250
Forward current
Peak forward current
Total power dissipation
TS = 70 °C
Junction temperature
Storage temperature
IF 250
IFM 625
Ptot 350
Tj 150
Tstg -65 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
230
Unit
V
mA
mW
°C
Unit
K/W
1 Aug-06-2001
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Pages | Pages 4 | ||
Télécharger | [ BAS19 ] |
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