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Infineon Technologies AG - Silicon Switching Diodes

Numéro de référence BAS19
Description Silicon Switching Diodes
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BAS19 fiche technique
BAS19...BAS21
Silicon Switching Diodes
3
High-speed, high-voltage switching applications
13
EHA07002
2
1 VPS05161
Type
BAS19
BAS20
BAS21
Marking
JPs
JRs
JSs
Pin Configuration
1=A
2 = n.c. 3 = C
1=A
2 = n.c. 3 = C
1=A
2 = n.c. 3 = C
Package
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Diode reverse voltage
BAS19
BAS20
BAS21
Symbol
VR
Value
100
150
200
Peak reverse voltage-
BAS19
BAS20
BAS21
VRM
120
200
250
Forward current
Peak forward current
Total power dissipation
TS = 70 °C
Junction temperature
Storage temperature
IF 250
IFM 625
Ptot 350
Tj 150
Tstg -65 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
 230
Unit
V
mA
mW
°C
Unit
K/W
1 Aug-06-2001

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