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PDF BAS16HT1D Data sheet ( Hoja de datos )
| Número de pieza | BAS16HT1D | |
| Descripción | Switching Diode | |
| Fabricantes | ON Semiconductor | |
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BAS16HT1
Preferred Device
Switching Diode
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
75
200
500
Vdc
mAdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FR-5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
200 mW
1.57 mW/°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RθJA
TJ, Tstg
635
−55 to
150
°C/W
°C
1. FR-4 Minimum Pad.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
IR
V(BR)
VF
CD
µAdc
− 1.0
− 50
− 30
75 − Vdc
mV
− 715
− 855
− 1000
− 1250
− 2.0 pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 Ω)
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc,
RL = 500 Ω)
VFR − 1.75 Vdc
trr − 6.0 ns
QS − 45 pC
http://onsemi.com
1
CATHODE
2
ANODE
2
1
SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
A6 M
A6 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS16HT1
SOD−323 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 3
1
Publication Order Number:
BAS16HT1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BAS16HT1D.PDF ] | |
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