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Siemens Semiconductor Group - Silicon Switching Diode (For high-speed switching)

Numéro de référence BAS16
Description Silicon Switching Diode (For high-speed switching)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BAS16 fiche technique
Silicon Switching Diode
q For high-speed switching
BAS 16
Type
BAS 16
Marking
A6s
Ordering Code
(tape and reel)
Q62702-F739
Pin Configuration
Package1)
SOT-23
Maximum Ratings
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 54 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
VR
VRM
IF
IFS
Ptot
Tj
Tstg
Values
Unit
75 V
85
250 mA
4.5 A
370 mW
150 ˚C
– 65 … + 150
Rth JA
Rth JS
330
260
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
07.94

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