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Numéro de référence | BAS125W | ||
Description | Preliminary data Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping application) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
1 Page
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
BAS 125W
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code Pin Configuration
Package
BAS 125-04W 14s
Q62702-
1 = A1 2 = C2 3=C1/A2 SOT-323
BAS 125-05W 15s
Q62702-
1 = A1 2 = A2 3=C1/C2 SOT-323
BAS 125-06W 16s
Q62702-
1 = C1 2 = C2 3=A1/A2 SOT-323
BAS 125W
13s Q62702-
1=A
3 = C SOT-323
Maximum Ratings
Parameter
Symbol
Values Unit
Diode reverse voltage
Forward current
Surge forward current (t ≤ 10ms)
Total Power dissipation
TS ≤ 25 °C
Junction temperature
Storage temperature
VR
IF
IFSM
Ptot
Tj
Tstg
25 V
100 mA
500
mW
250
150 °C
- 55 ... + 150
Thermal Resistance
Junction ambient, BAS125W 1)
Junction ambient, BAS 125-04W...06W 1)
Junction - soldering point, BAS125W
Junction - soldering point, BAS125-04W...06W
RthJA
RthJA
RthJS
RthJS
≤ 310
≤ 425
≤ 230
≤ 265
K/W
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group
1
Dec-20-1996
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Pages | Pages 5 | ||
Télécharger | [ BAS125W ] |
No | Description détaillée | Fabricant |
BAS125 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) | Siemens Semiconductor Group |
BAS125-04 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) | Siemens Semiconductor Group |
BAS125-04W | Preliminary data Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping application) | Siemens Semiconductor Group |
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