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BAS125-07W fiches techniques PDF

Infineon Technologies AG - Silicon Schottky Diode

Numéro de référence BAS125-07W
Description Silicon Schottky Diode
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BAS125-07W fiche technique
BAS125-07W
Silicon Schottky Diode
 For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
 Integrated diffused guard ring
 Low forward voltage
3
4
2
1 VPS05605
41
32
EHA07008
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAS125-07W
Marking
17s
Pin Configuration
Package
1 = C1 2 = C2 3 = A2 4 = A1 SOT343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current (t 100s)
Total power dissipation, TS = 96 °C
Junction temperature
Storage temperature
Symbol
VR
IF
IFSM
Ptot
Tj
Tstg
Value
25
100
500
250
150
-55 ... 150
Unit
V
mA
mW
°C
Maximum Ratings
Junction - soldering point1)
RthJS
 215
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-16-2001

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