|
|
Numéro de référence | BAS125-07W | ||
Description | Silicon Schottky Diode | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
BAS125-07W
Silicon Schottky Diode
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
3
4
2
1 VPS05605
41
32
EHA07008
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BAS125-07W
Marking
17s
Pin Configuration
Package
1 = C1 2 = C2 3 = A2 4 = A1 SOT343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current (t 100s)
Total power dissipation, TS = 96 °C
Junction temperature
Storage temperature
Symbol
VR
IF
IFSM
Ptot
Tj
Tstg
Value
25
100
500
250
150
-55 ... 150
Unit
V
mA
mW
°C
Maximum Ratings
Junction - soldering point1)
RthJS
215
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-16-2001
|
|||
Pages | Pages 4 | ||
Télécharger | [ BAS125-07W ] |
No | Description détaillée | Fabricant |
BAS125-07 | Silicon Schottky Diode (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) | Siemens Semiconductor Group |
BAS125-07 | Silicon Schottky Diode | Infineon Technologies AG |
BAS125-07W | Silicon Schottky Diode (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) | Siemens Semiconductor Group |
BAS125-07W | Silicon Schottky Diode | Infineon Technologies AG |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |