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Infineon Technologies AG - Silicon Low Leakage Diode

Numéro de référence BAS116
Description Silicon Low Leakage Diode
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BAS116 fiche technique
Silicon Low Leakage Diode
Low-leakage applications
Medium speed switching times
BAS116...
BAS116
3
12
Type
BAS116
Package
SOT23
Configuration
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
VR
VRM
IF
I FSM
t=1s
Total power dissipation
TS 54°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BAS116
Ptot
Tj
Tstg
Symbol
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Marking
JVs
Value
80
85
250
4.5
0.5
370
Unit
V
mA
A
mW
150
-65 ... 150
°C
Value
260
Unit
K/W
1 Mar-10-2004

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