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Numéro de référence | BAS116 | ||
Description | Silicon Low Leakage Diode | ||
Fabricant | Infineon Technologies AG | ||
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1 Page
Silicon Low Leakage Diode
• Low-leakage applications
• Medium speed switching times
BAS116...
BAS116
3
12
Type
BAS116
Package
SOT23
Configuration
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
VR
VRM
IF
I FSM
t=1s
Total power dissipation
TS ≤ 54°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BAS116
Ptot
Tj
Tstg
Symbol
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Marking
JVs
Value
80
85
250
4.5
0.5
370
Unit
V
mA
A
mW
150
-65 ... 150
°C
Value
≤ 260
Unit
K/W
1 Mar-10-2004
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Pages | Pages 4 | ||
Télécharger | [ BAS116 ] |
No | Description détaillée | Fabricant |
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