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BAQ133 fiches techniques PDF

Vishay Telefunken - Silicon Planar Diodes

Numéro de référence BAQ133
Description Silicon Planar Diodes
Fabricant Vishay Telefunken 
Logo Vishay Telefunken 





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BAQ133 fiche technique
Silicon Planar Diodes
BAQ133...BAQ135
Vishay Telefunken
Features
D Very low reverse current
Applications
Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
96 12009
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage
Peak forward surge current
Forward current
Junction temperature
Storage temperature range
tp=1ms
Type
BAQ133
BAQ134
BAQ135
Symbol
VR
VR
VR
IFSM
IF
Tj
Tstg
Value
30
60
125
2
200
200
–65...+200
Unit
V
V
V
A
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
on PC board 50mmx50mmx1.6mm
Symbol
RthJA
Value
500
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Breakdown voltage
IF=100mA
xE 300lx, VR
xE 300lx, VR, Tj=125°C
xE 300lx, VR=15V
xE 300lx, VR=30V
xE 300lx, VR=60V
IR=5mA, tp/T=0.01, tp=0.3ms
Diode capacitance VR=0, f=1MHz
Type
BAQ133
BAQ134
BAQ135
BAQ133
BAQ134
BAQ135
Symbol Min Typ Max Unit
VF
IR
IR
IR
IR
IR
V(BR)
V(BR)
V(BR)
CD
1
13
0.5
0.5 1
0.5 1
0.5 1
40
70
140
3
V
nA
mA
nA
nA
nA
V
V
V
pF
Document Number 85536
Rev. 2, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
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