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Número de pieza | HMC404 | |
Descripción | GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER/ 26 - 33 GHz | |
Fabricantes | Hittite Microwave Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HMC404 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MICROWAVE CORPORATION
HMC404
GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
Typical Applications
The HMC404 is ideal for:
• 26 to 33 GHz Microwave Radios
• Up and Down Converter for
Point to Point Radios
• Satellite Communication Systems
Functional Diagram
5
Features
Integrated LO Amplifier: +2 dBm Input
Sub-Harmonically Pumped (x2) LO
Image Rejection: 22 dB
Small Size: 1.24mm x 1.86mm
General Description
The HMC404 chip is a sub-harmonically pumped
(x2) MMIC image rejection mixer with an integrated
LO amplifier which can be used as an upconverter
or downconverter. The chip utilizes a GaAs PHEMT
technology that results in a small overall chip area of
2.31mm2. The on-chip 90° hybrid provides excellent
amplitude and phase balance resulting in greater
than 22 dB of image rejection. The LO amplifier is a
single bias (+4V) two stage design with only +2 dBm
nominal drive required.
Electrical Specifications, TA = +25° C
Parameter
IF = 1 GHz
LO = +2 dBm & Vdd = +4V
Min. Typ.
Frequency Range, RF
26 - 33
Frequency Range, LO
13 - 16.5
Frequency Range, IF
DC - 3
Conversion Loss (As IRM)
11
Image Rejection
15 22
Noise Figure
11
1 dB Compression (Input)
+2 +6
2LO to RF Isolation
20 35
2LO to IF Isolation
20 35
IP3 (Input)
8 16
Amplitude Balance
±1.5
Phase Balance
±7
Supply Current (Idd)
* Unless otherwise noted, all measurements performed as downconverter.
28
Max.
15
15
Units
GHz
GHz
GHz
dB
dB
dB
dBm
dB
dB
dBm
dB
Deg
mA
5 - 118
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page v02.1001
MICROWAVE CORPORATION
HMC404
GaAs MMIC SUB-HARMONICALLY
PUMPED IRM MIXER, 26 - 33 GHz
Absolute Maximum Ratings
RF / IF Input (Vdd = +5V)
LO Drive (Vdd = +5V)
Vdd
Continuous Pdiss (Ta = 85 °C)
(derate 2.64 mW/°C above 85 °C)
Storage Temperature
Operating Temperature
+13 dBm
+13 dBm
5.5V
238 mW
-65 to +150 °C
-55 to +85 °C
5
Outline Drawing
5 - 122
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
8. NO CONNECTION REQUIRED TO UNLABED BOND PADS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HMC404.PDF ] |
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