PDF HMC399MS8 Data sheet ( Hoja de datos )

Número de pieza	HMC399MS8
Descripción	HIGH IP3 GaAs MMIC MIXER/ 700 - 1000 MHz
Fabricantes	Hittite Microwave Corporation
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No Preview Available ! v02.1203 MICROWAVE CORPORATION HMC399MS8 HIGH IP3 GaAs MMIC MIXER, 700 - 1000 MHz 12 Typical Applications High Dynamic Range Infrastructure: • GSM, GPRS & EDGE • CDMA & W-CDMA • Cable Modem Termination Systems Functional Diagram Features +35 dBm Input IP3 Conversion Loss: 8.5 dB Low External Part Count Ultra Small MSOP8 Package: 14.8 mm2 General Description The HMC399MS8 is a high dynamic range passive MMIC mixer in a plastic surface mount 8 lead Mini Small Outline Package (MSOP) covering 700 to 1000 MHz. Excellent input IP3 performance of +35 dBm for down conversion and +32 dBm for up conversion is provided for 2.5G & 3G GSM/CDMA based cellular applications at an LO drive of +17dBm. With a 1 dB compression of +23 dBm, the RF port will accept a wide range of input signal levels. Conversion loss is 8.5 dB typical and LO isolations are maintained at 23 to 35 dB. This miniature single-ended monolithic GaAs FET mixer requires only one external inductor to optimize the LO frequency response. The 50 to 250 MHz IF frequency response will satisfy many cellular transmit or receive frequency plans. The HMC399MS8 input IP3 performance coupled with its high P1dB rivals traditional active FET mixers while offering a much smaller 14.8mm2 standard IC footprint and no DC bias. Electrical Speciﬁcations, TA = +25°C, LO = +17 dBm, IF = 200 MHz* Parameter Frequency Range, RF Frequency Range, LO** Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation IP3 (Input) 1 dB Gain Compression (Input) LO Input Drive Level (Typical) Min. Typ. Max. 740 - 800 540 - 740 DC - 200 9 10 9 10 19 23 22 27 30 34 20 24 +16 to +18 Min. Typ. Max. 800 - 900 550 - 840 DC - 250 8.5 9.5 8.5 9.5 20 24 26 31 31 35 19 23 +16 to +18 Min. Typ. Max. 880 - 960 630 - 900 DC - 250 8 10 8 10 21 25 29 35 30 34 18 22 +16 to +18 Units MHz MHz MHz dB dB dB dB dBm dBm dBm 12 - 204 * Unless otherwise noted, all measurements performed as a downconverter with low side LO & IF = 200 MHz ** LO Frequency optimized. See application circuit herein. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 page v02.1203 MICROWAVE CORPORATION Absolute Maximum Ratings RF/IF Input LO Drive Storage Temperature Operating Temperature IF DC Current +25 dBm +27 dBm -65 to +150 °C -40 to +85 °C ±40 mA 12 Outline Drawing HMC399MS8 HIGH IP3 GaAs MMIC MIXER, 700 - 1000 MHz NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD MATERIAL: COPPER ALLOY 3 LEAD PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO THE PCB RF GROUND. 12 - 208 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 Page

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