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PDF HMC375LP3 Data sheet ( Hoja de datos )
| Número de pieza | HMC375LP3 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER/ 1.7 - 2.2 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0604
MICROWAVE CORPORATION
HMC375LP3
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
8 Typical Applications
The HMC375LP3 is ideal for
basestation receivers:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• DECT
Functional Diagram
Features
Noise Figure: 0.9 dB
+34 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0 V @ 136 mA
50 Ohm Matched Output
General Description
The HMC375LP3 high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier is ideal for
GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz.
This LNA has been optimized to provide 0.9 dB
noise figure, 17 dB gain and +33 dBm output IP3
from a single supply of +5.0V @ 136mA. Input and
output return losses are 14 dB typical with the LNA
requiring minimal external components to optimize
the RF input match, RF ground and DC bias. The
HMC375LP3 shares the same package with the
HMC356LP3 and HMC372LP3 high IP3 LNAs.
A low cost, leadless 3x3 mm (LP3) SMT QFN
package houses the low noise amplifier.
Electrical Specifications, TA = +25° C, Vs = +5V
Parameter
Min. Typ. Max. Min. Typ. Max.
Frequency Range
1.8 - 1.9
1.9 - 2.0
Gain
16.5 18.5
15.5 17.5
Gain Variation Over Temperature
0.014 0.021
0.014 0.021
Noise Figure
1.0 1.35
0.95 1.2
Input Return Loss
12 13
Output Return Loss
13 16
Reverse Isolation
35 34
Output Power for
1dB Compression (P1dB)
16 18.5
16 18.5
Saturated Output Power (Psat)
19.5
19.5
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
34
33.5
Supply Current (Idd)
136 136
Min. Typ. Max.
2.0 - 2.1
15 17
0.014 0.021
0.9 1.2
14
11
34
15 18
19.5
33
136
Min. Typ. Max.
2.1 - 2.2
13 15
0.014 0.021
0.9 1.3
15
8
34
14.5 17.5
19.5
32.5
136
Units
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
dBm
dBm
mA
8 - 142
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v01.0604
MICROWAVE CORPORATION
HMC375LP3
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
8 Pin Descriptions
Pin Number
Function
1, 3, 4,
6-10,12,14,16
N/C
2 RF IN
Description
No connection necessary.
These pins may be connected to RF/DC ground.
This pin is matched to 50 Ohms with a 13 nH
inductor to ground. See Application Circuit.
Interface Schematic
AC Ground - An external capacitor of 0.01µF to
5
ACG
ground is required for low frequency bypassing.
See Application Circuit for further details.
11
RF OUT
This pin is AC coupled and matched to 50 Ohms.
13,15
Vdd2, Vdd1
Power supply voltage. Choke inductor and bypass
capacitor are required. See application circuit.
GND
Application Circuit
Package bottom must be connected to RF/DC ground.
8 - 146
Note: L1, L2, L3 and C1 should be located as close to pins as possible.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC375LP3.PDF ] | |
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