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PDF HMC373LP3 Data sheet ( Hoja de datos )
| Número de pieza | HMC373LP3 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE/ 700 - 1000 MHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0604
MICROWAVE CORPORATION
HMC373LP3
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
8
8 - 132
Typical Applications
The HMC373LP3 is ideal for
basestation receivers:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• Private Land Mobile Radio
Features
Noise Figure: 0.9 dB
+35 dBm Output IP3
Gain: 14 dB
Low Loss LNA Bypass Path
Single Supply: +5.0 V @ 90 mA
50 Ohm Matched Output
Functional Diagram
General Description
The HMC373LP3 is a versatile, high dynamic range
GaAs MMIC Low Noise Amplifier that integrates a
low loss LNA bypass mode on the IC. The amplifier
is ideal for GSM & CDMA cellular basestation front-
end receivers operating between 700 and 1000
MHz and provides 0.9 dB noise figure, 14 dB of gain
and +35 dBm IP3 from a single supply of +5.0V @
90 mA. Input and output return losses are 28 and
12 dB respectively with the LNA requiring minimal
external components to optimize the RF input
match, RF ground and DC bias. By presenting an
open or short circuit to a single control line, the LNA
can be switched into a low 2.0 dB loss bypass mode
reducing the current consumption to 10 µA. A low
cost, leadless 3x3 mm QFN surface mount package
(LP3) houses the low noise amplifier.
Electrical Specifications, TA = +25° C, Vdd = +5V
Parameter
LNA Mode
Min. Typ. Max.
LNA Mode
Min. Typ. Max.
Bypass Mode
Min. Typ. Max.
Units
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Power for 1dB Compression (P1dB)*
Saturated Output Power (Psat)
Third Order Intercept (IP3)*
(-20 dBm Input Power per tone, 1 MHz tone spacing)
Supply Current (Idd)
810 - 960
11.5 13.5
0.008 0.015
0.9 1.3
28
12
20
18 21
22.5
35.5
90
700 - 1000
10.5
14
0.008 0.015
1.0 1.4
25
11
19
17 20
22
35
90
700 - 1000
-2.8 -2.0
0.002 0.004
30
25
30
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
50 dBm
0.01
mA
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB and IP3 for Bypass Mode are referenced to RFIN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v01.0604
MICROWAVE CORPORATION
HMC373LP3
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
8
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8.0 Vdc
RF Input Power
(RFin)(Vdd = +5.0 Vdc)
LNA Mode +15 dBm
Bypass Mode +30 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 13.5 mW/°C above 85 °C)
0.878 W
Thermal Resistance
(channel to ground paddle)
74.1 °C/W
Storage Temperature
-65 to +150° C
Operating Temperature
-40 to +85° C
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
87
90
93
Truth Table
LNA Mode
Bypass Mode
Vctl= Short Circuit to DC Ground
Vctl= Open Circuit
Outline Drawing
8 - 136
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC373LP3.PDF ] | |
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