HMC342 Datasheet PDF - Hittite Microwave Corporation
| Part Number | HMC342 | |
| Description | GaAs MMIC LOW NOISE AMPLIFIER/ 13 - 25 GHz | |
| Manufacturers | Hittite Microwave Corporation | |
| Logo |  |
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v00.0301
MICROWAVE CORPORATION
1 Typical Applications
The HMC342 is ideal for:
• Microwave Point-to-Point Radios
• Millimeterwave Point-to-Point Radios
• VSAT & SATCOM
Functional Diagram
HMC342
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
Features
Noise Figure : 3.5 dB
Gain: 20 dB
Single Supply : +3V @ 36 mA
Small Size: 1.06 mm x 2.02 mm
General Description
The HMC342 chip is a GaAs MMIC Low Noise
Amplifier (LNA) which covers the frequency range
of 13 to 25 GHz. The chip can easily be inte-
grated into Multi-Chip Modules (MCMs) due to its
small (2.14 mm2) size. The chip utilizes a GaAs
PHEMT process offering 20 dB gain from a single
bias supply of + 3.0V @ 36 mA with a noise figure
of 3.5 dB. All data is with the chip in a 50 ohm
test fixture connected via 0.025 mm (1 mil) diam-
eter wire bonds of minimal length 0.31 mm (<12
mils).
Electrical Specifications, TA = +25° C, Vdd = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
Min.
16
6
6
39
1
3
8
Typ.
13 - 25
21
.03
3.5
13
14
45
5
8
13
41
Max.
26
.04
4.5
Units
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
dBm
dBm
mA
1 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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v00.0301
MICROWAVE CORPORATION
1 Assembly Diagrams
HMC342
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bring-
ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
1 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HMC342 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HMC342.PDF Datasheet ] | |
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