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PDF HMC333 Data sheet ( Hoja de datos )
| Número de pieza | HMC333 | |
| Descripción | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER/ 3.0 - 3.8 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC333 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MICROWAVE CORPORATION
v00.0901
HMC333
GaAs MMIC MIXER w/ INTEGRATED
LO AMPLIFIER, 3.0 - 3.8 GHz
Typical Applications
The HMC333 is ideal for:
• Wireless Local Loop
12
Functional Diagram
Features
Integrated LO Amplifier w/ Pdiss: < 25 mW
Conversion Loss / Noise Figure: 8.5 dB
Low LO Drive Level: 0 dBm
Input IP3: +10 dBm
Single Positive Supply: 3V to 5V
General Description
The HMC333 is a single balanced mixer IC with an
integrated LO amplifier. This converter IC can oper-
ate as an upconverter or downconverter between
3.0 GHz and 3.8 GHz. With the integrated LO ampli-
fier, the mixer requires an LO drive level of only 0
dBm, and requires only 7 mA from a single positive
+3V rail. The mixer has 8.5 dB of conversion loss,
an input P1dB of 0 dBm and an input third order
intercept point of +10 dBm at 3.5 GHz.
Electrical Specifications, TA = +25° C
Parameter
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
1 dB Compression (Input)
Supply Current (Idd)
IF = 100 MHz
LO = 0 dBm & Vdd = +3V
Min. Typ. Max.
3.0 - 3.8
DC - 1.0
8.5 11
8.5 11
10 15
5 10
10 15
3 10
-3 +1
7
* Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz.
Units
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
mA
12 - 154
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
MICROWAVE CORPORATION
v00.0901
HMC333
GaAs MMIC MIXER w/ INTEGRATED
LO AMPLIFIER, 3.0 - 3.8 GHz
Pin Descriptions
Pin Number
Function
Description
Power supply for the LO Amplifier. Two external RF bypass
1 Vdd capacitors (10 pF & 10,000 pF) and an external inductor (1.8
nH) are required.
Interface Schematic
12
2, 5 GND
Ground: Pin must connect to RF ground.
IF Port: This pin is DC coupled. For applications not requiring
operation to DC, this port should be DC blocked externally
3
IF Port
using a series capacitor whose value has been chosen to pass
the necessary IF frequency range. For operation to DC, this pin
must not source/sink more than 3mA of current or die non-func-
tion and possible die failure will result.
4
RF Port
RF Port: This pin is AC coupled and matched to 50 Ohm from
3.0 - 3.8 GHz.
6
LO Port
LO Port: This pin is AC coupled and matched to 50 Ohm from
3.0 - 3.8 GHz
Application Circuit
12 - 158
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC333.PDF ] | |
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