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PDF HMC332 Data sheet ( Hoja de datos )
| Número de pieza | HMC332 | |
| Descripción | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER/ 2.0 - 2.8 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC332 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MICROWAVE CORPORATION
v00.0901
HMC332
GaAs MMIC MIXER w/ INTEGRATED
LO AMPLIFIER, 2.0 - 2.8 GHz
12
Typical Applications
The HMC332 is ideal for:
• MMDS
• PCMCIA
• WirelessLAN
• WCDMA micro-BTS
Functional Diagram
Features
Integrated LO Amplifier w/ Pdiss: < 20 mW
Conversion Loss / Noise Figure: 8.0 dB
Low LO Drive Level: 0 dBm
Input IP3: +10 dBm
Single Positive Supply: 3V to 5V
General Description
The HMC332 is a single balanced mixer IC with an
integrated LO amplifier. This converter IC can oper-
ate as an upconverter or downconverter between
2.0 GHz and 2.8 GHz. With the integrated LO ampli-
fier, the mixer requires an LO drive level of only 0
dBm, and requires only 6 mA from a single positive
+3V rail. The mixer has 8 dB of conversion loss, an
input P1dB of 0 dBm, and an input third order inter-
cept point of +10 dBm.
Electrical Specifications, TA = +25° C
Parameter
IF = 100 MHz
LO = 0 dBm & Vdd = +3V
Min. Typ. Max.
Frequency Range, RF & LO
2.0 - 2.8
Frequency Range, IF
DC - 1.0
Conversion Loss
8 10
Noise Figure (SSB)
8 10
LO to RF Isolation
11 20
LO to IF Isolation
25
RF to IF Isolation
11 17
IP3 (Input)
4 10
1 dB Compression (Input)
-4 0
Supply Current (Idd)
6
* Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz.
Units
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
mA
12 - 148
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
MICROWAVE CORPORATION
v00.0901
HMC332
GaAs MMIC MIXER w/ INTEGRATED
LO AMPLIFIER, 2.0 - 2.8 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
Power supply for the LO Amplifier. Two external RF bypass capaci-
1 Vdd tors (10 pF & 10,000 pF) and an external inductor (4.7 nH) are
required.
12
2, 5 GND
Ground: Pin must connect to RF ground.
IF Port: This pin is DC coupled. For applications not requiring
operation to DC, this port should be DC blocked externally using
3
IF Port
a series capacitor whose value have been chosen to pass the
necessary IF frequency range. For operation to DC, this pin must
not source/sink more than 3mA of current or die non-function and
possible die failure will result.
4
RF Port
RF Port: This pin is AC coupled and matched to 50 Ohm from 2.0
- 2.8 GHz.
6
LO Port
LO Port: This pin is AC coupled and matched to 50 Ohm from 2.0
- 2.8 GHz.
Application Circuit
12 - 152
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC332.PDF ] | |
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