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PDF HMC330 Data sheet ( Hoja de datos )
| Número de pieza | HMC330 | |
| Descripción | GaAs MMIC SUB-HARMONICALLY PUMPED MIXER/ 25 - 40 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0301
MICROWAVE CORPORATION
HMC330
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
5
5 - 88
Typical Applications
The HMC330 is ideal for:
• LMDS
• Point-to-Point Radios
• SATCOM
Features
Sub-Harmonically Pumped (x2) LO
Input IP3: 17 dBm
2LO/RF Isolation: 48 dB
Small Size: 0.97 mm2
Functional Diagram
General Description
Electrical Specifications, TA = +25° C
The HMC330 MMIC is a broadband double bal-
anced sub-harmonically pumped passive mixer that
may be used as an upconverter or downconverter.
The mixer requires no external matching or bias.This
design was optimized to provide better 1dB com-
pression performance as compared to the HMC266
under the same LO drive levels. The HMC330 pro-
vides greater than 38 dB LO to RF and 2LO to RF
isolation performance. Measurements were made
with the chip mounted and ribbon bonded into a
50-ohm microstrip test fixture that contains 5-mil
alumina substrates between the chip and K-connec-
tors. Measured data includes the parasitic effects
of the assembly. RF connections to the chip were
made with 0.076 mm (3-mil) ribbon bond with mini-
mal length <0.31mm (<12 mil).
Parameter
LO = +14 dBm, IF = 2.5 GHz
Min. Typ. Max.
Units
Frequency Range, RF
25 - 40
GHz
Frequency Range, LO
12.5 - 20
GHz
Frequency Range, IF
2-4
GHz
Conversion Loss
13 17 dB
Noise Figure (SSB)
13 17 dB
2LO to RF Isolation
40 48
dB
LO to RF Isolation
30 38
dB
2LO to IF Isolation
50 60
dB
RF to IF Isolation
27 37
dB
LO to IF Isolation
38 48
dB
IP3 (Input)
+13 +17
dBm
1 dB Compression (Input)
+4 +8
dBm
* Unless otherwise noted, all measurements performed as downconverter, IF= 2.5 GHz.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v01.0301
MICROWAVE CORPORATION
HMC330
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
MIC Assembly Techniques
3 mil Ribbon Bond
3 mil Ribbon Bond
5
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-sub-
strate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended
to minimize inductance on RF, LO & IF ports.
5 - 92
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC330.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HMC330 | GaAs MMIC SUB-HARMONICALLY PUMPED MIXER/ 25 - 40 GHz | Hittite Microwave Corporation |
| HMC331 | GaAs MMIC PASSIVE FREQUENCY DOUBLER/ 12 - 18 GHz INPUT | Hittite Microwave Corporation |
| HMC332 | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER/ 2.0 - 2.8 GHz | Hittite Microwave Corporation |
| HMC333 | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER/ 3.0 - 3.8 GHz | Hittite Microwave Corporation |
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