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PDF HMC327MS8G Data sheet ( Hoja de datos )
| Número de pieza | HMC327MS8G | |
| Descripción | GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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HMC327MS8G / 327MS8GE
v06.1209
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
11
Typical Applications
The HMC327MS8G(E) is ideal for:
• Wireless Local Loop
• WiMAX & Fixed Wireless
• Access Points
• Subscriber Equipment
Features
High Gain: 21 dB
Saturated Power: +30 dBm @ 45% PAE
Output P1dB: +27 dBm
Single Supply: +5V
Power Down Capability
Low External Part Count
Compact MSOP Package: 14.8 mm2
Functional Diagram
General Description
The HMC327MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
power amplifier which operates between 3 and 4 GHz.
The amplifier is packaged in a low cost, surface mo-
unt 8 leaded package with an exposed base for
improved RF and thermal performance. With a mini-
mum of external components, the amplifier provides
21 dB of gain, +30 dBm of saturated power at 45%
PAE from a single +5V supply. Power down capability
is available to conserve current consumption when the
amplifier is not in use.
11 - 2
Electrical Specifications, TA = +25 °C, Vs = 5V, Vctl = 5V
Parameter
Frequency Range
Gain
Min.
17
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
*See Application Circuit for proper biasing configuration.
24
36
Vctl* = 0V/5V
Vctl* = 5V
tON, tOFF
Typ.
3-4
21
0.025
15
8
27
30
40
5
0.002 / 250
7
40
Max.
24
0.035
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
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1 page  
v05.0509
HMC327MS8G / 327MS8GE
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
Gain, Power & Quiescent Supply
Current vs. Vpd @ 3.5 GHz
30
25
20 Icq
15
P1dB
10 Psat
Gain
5
2.5 3 3.5 4 4.5
Vctl (V)
250
200
150
100
50
0
5
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd)
RF Input Power (RFIN)(Vs = Vctl = +5V)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 29 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5V
+5.5V
+16 dBm
150 °C
1.88 W
34 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC327MS8G
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC327MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H327
XXXX
H327
XXXX
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11 - 5
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